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| High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary data IXTK 33N50 VDSS = 500 V ID (cont) = 33 A RDS(on) = 0.17 Symbol VDSS VDGR VGS VGSM ID25 IDM PD T T J Test conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1.0 M Continuous Transient T C = 25C T C = 25C, pulse width limited by TJM T C = 25C Maximum ratings 500 500 20 30 33 132 416 -55 ... +150 150 -55 ... +150 V V V V TO-264 AA G D (TAB) D S A A W C C C G = Gate S = Source D = Drain TAB = Drain TJM stg Md Weight Mounting torque 1.13/10 Nm/lb.in. 10 300 g C Features * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * International standard package * Fast switching times Applications * Motor controls * DC choppers * Uninterruptable Power Supplies (UPS) * Switch-mode and resonant-mode Advantages * Easy to mount with one screw (isolated mounting screw hole) * Space savings * High power density Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values Min. 500 0.087 2.0 -0.25 100 TJ = 25C TJ = 125C 200 3 0.17 4.0 Typ. Max. V %/K V %/K nA A mA (T J = 25C unless otherwise specified) VDSS VGS(th) IGSS IDSS R DS(on) VGS = 0 V, ID = 5 mA BVDSS temperature coefficient VDS = VGS, ID = 250 A VGS(th) temperature coefficient VGS = 20 V DC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 IXYS reserves the right to change limits, test conditions, and dimensions. 95513C (4/97) (c) 2000 IXYS All rights reserved 1-4 IXTK 33N50 Symbol Test Conditions (T J = 25C unless otherwise specified) gfs C iss C oss C rss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK 0.15 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 (External) VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 0.5 ID25, pulse test Characteristic values Min. Typ. Max. 24 4900 690 300 53 30 140 40 250 30 115 S pF pF pF ns ns ns ns Dim. Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 TO-264 AA Outline nC nC nC 0.30 K/W K/W Source-Drain Diode Symbol IS ISM VSD Test Conditions VGS= 0 V Ratings and Characteristics (T J = 25C unless otherwise specified) Min. Typ. Max. 33 132 1.5 A A V A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % t rr IF = IS, -di/dt = 100 A/s, VR = 100 V 850 ns (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTK 33N50 50 VGS = 10 V 9V 8V 7V 80 70 60 TJ = 25C TJ = 125C 40 VGS = 10 V 9V 8V 7V 6V ID - Amperes 50 6V ID - Amperes 30 20 5V 40 30 20 10 0 5V 10 0 0 4 8 12 16 20 0 4 8 12 16 20 VDS - Volts VDS - Volts Figure 1. Output Characteristics at 25OC 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 5.5 VGS = 10 V Figure 2. Output Characteristics at 125OC VGS = 10 V 5.0 RDS(ON) - Normalized RDS(ON) - Normalized 4.5 4.0 3.5 3.0 2.5 2.0 1.5 TJ = 125C ID = 33 A TJ = 25C ID = 16.5 A 10 20 30 40 50 60 70 80 1.0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C O Figure 3. RDS(on) normalized to 16.5A/25 C vs. ID 40 35 30 Figure 4. RDS(on) normalized to 16.5A/25OC vs. TJ 50 40 ID - Amperes 25 20 15 10 ID - Amperes 30 20 TJ = 125oC 10 5 0 -50 TJ = 25oC -25 0 25 50 75 100 125 150 0 2 3 4 5 6 7 8 TC - Degrees C VGS - Volts Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves (c) 2000 IXYS All rights reserved 3-4 IXTK 33N50 14 12 10 Vds = 300 V Vds=300V = 33 ID=30A A = 10 mA IG=10mA 4500 4000 F = 1MHz 1 MHz Ciss Capacitance - pF 3500 3000 2500 2000 1500 1000 500 0 VGS - Volts 8 6 4 2 0 0 50 100 150 200 250 300 Coss Crss 0 5 10 15 20 25 Gate Charge - nC VDS - Volts Figure 7. Gate Charge 100 1 00 80 Figure 8. Capacitance Curves ID - Amperes ID - Amperes 60 TJ = 125C 10 1 ms 10 ms TC = 25C 100 ms DC 40 1 20 TJ = 25C 0 0.4 0. 1 0.6 0.8 1.0 1.2 10 1 00 500 VSD - Volts Figure 9. Source Current vs. Source-toDrain Voltage 1.00 VDS - Volts Figure 10. Forward Biased SOA R(th)JC - K/W 0.10 Single Pulse 0.01 0.001 0.01 0.1 1 10 Pulse Width - Seconds Figure 11. Transient Thermal Resistance (c) 2000 IXYS All rights reserved 4-4 |
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